SUD50N02-09P
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Краткое описание:
Power Field-Effect Transistor, 20A I(D), 20V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 20A I(D), 20V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
| RoHS | Not Compliant |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | SUD |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Packaging | Tape and Reel |
| Package/Case | TO-252-3 |
| RoHS Compliant | No |
| Package Quantity | 2000 |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 25ns |
| Max Power Dissipation | 9.5W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 20V |
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