SUD50N02-09P-E3

Снят с производства
SUD50N02-09P-E3 - Vishay(Siliconix)
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Краткое описание: N-CHANNEL TrenchFET MOSFET 20V 20A 9.5mR 175°C Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The SUD50N02-09P-E3 is a surface mount N-CHANNEL MOSFET from Vishay, featuring a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 39.5W and a continuous drain current of 20A. The device has a drain to source resistance of 9.5mR and a gate to source voltage of 20V. It is lead free and RoHS compliant, packaged in a TO-252-3 package.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 9.5mR
Package/Case TO-252-3
RoHS Compliant Yes
Package Quantity 2000
Input Capacitance 1.3nF
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 25ns
Max Power Dissipation 39.5W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 9.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 20A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 9.5mR

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