SUD50N03-09P-GE3

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SUD50N03-09P-GE3 - Vishay(Siliconix)
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Краткое описание: N-CHANNEL TrenchFET MOSFET 30V 63A 9.5mR 175°C Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The SUD50N03-09P-GE3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 63A and a drain to source voltage of 30V. The device has a maximum power dissipation of 65.2W and a resistance of 9.5mR. It is packaged in a TO-252-3 case and is available in quantities of 2000 on tape and reel.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.050717oz
Polarity N-CHANNEL
Packaging Tape and Reel
Rds On Max 9.5mR
Resistance 0.0095R
Package/Case TO-252-3
Package Quantity 2000
Input Capacitance 2.2nF
Number of Channels 1
Max Power Dissipation 65.2W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 9.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 63A
Drain to Source Voltage (Vdss) 30V

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