SUD50N03-11-E3

Снят с производства
SUD50N03-11-E3 - Vishay(Siliconix)
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Краткое описание: N-CHANNEL TrenchFET MOSFET 30V 50A 7.5W TO-252-3
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The SUD50N03-11-E3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 50A and a drain to source breakdown voltage of 30V. The device features a maximum power dissipation of 62.5W and a gate to source voltage of 20V. It is packaged in a TO-252-3 package and is RoHS compliant.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 6ns
Packaging Tape and Reel
Rds On Max 11mR
Package/Case TO-252-3
RoHS Compliant Yes
Package Quantity 2000
Input Capacitance 1.13nF
Power Dissipation 7.5W
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 18ns
Max Power Dissipation 62.5W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 11mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 50A
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage 30V

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