SUD50P04-09L-E3
Производится
Увеличить
Краткое описание:
P-Channel Power MOSFET, 50A, -40V, 9.4mR, TO-252
Дополнительная информация
P-channel power MOSFET with 50A continuous drain current and -40V drain-source voltage. Features low 9.4mΩ drain-source on-resistance and 136W maximum power dissipation. Operates from -55°C to 175°C, packaged in a TO-252-3 surface mount or through-hole configuration. RoHS compliant with a 10ns turn-on delay and 140ns fall time.
| RoHS | Compliant |
| Mount | Through Hole, Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 140ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.4mR |
| Nominal Vgs | -1V |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2000 |
| Input Capacitance | 4.8nF |
| Power Dissipation | 3W |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 145ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 136W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 9.4mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
