SUD50P08-25L-E3
Производится
Увеличить
Краткое описание:
P-Channel MOSFET, 80V, 12.5A, 25.2mR, TO-252, Surface Mount
Дополнительная информация
P-channel power MOSFET featuring 80V drain-source voltage and 12.5A continuous drain current. Offers a low 25.2mΩ drain-source on-resistance. Surface mountable in a TO-252-3 package, this RoHS compliant component boasts a maximum power dissipation of 136W and operates from -55°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 105ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 100ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 25.2mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.7nF |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 105ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 136W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12.5A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 25.2mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
