SUM110N04-04-E3

Снят с производства
SUM110N04-04-E3 - Vishay(Siliconix)
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Краткое описание: N-CHANNEL TrenchFET MOSFET 40V 110A 3.5mR 250W TO-263-3
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The SUM110N04-04-E3 is a surface mount N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 250W and a continuous drain current of 110A. The device features a drain to source breakdown voltage of 40V and a drain to source resistance of 3.5mR. The TO-263-3 package is suitable for surface mount applications.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 85ns
Packaging Tape and Reel
Rds On Max 3.5mR
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 6.8nF
Power Dissipation 3.75W
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 75ns
Max Power Dissipation 250W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 110A
Drain to Source Voltage (Vdss) 40V
Drain to Source Breakdown Voltage 40V

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