SUM110N10-09-E3
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N-Channel MOSFET, 110A, 100V, 9.5mR, TO-263, Power
Дополнительная информация
N-channel power MOSFET with 100V drain-source voltage and 110A continuous drain current. Features a low 9.5mΩ drain-source on-resistance and 437.5W maximum power dissipation. Designed for surface mounting in a TO-263 package, this RoHS compliant component offers fast switching speeds with turn-on delay of 20ns and fall time of 130ns. Operating temperature range from -55°C to 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 130ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9.5mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 6.7nF |
| Power Dissipation | 3.75W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 437.5W |
| Reverse Recovery Time | 70ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 9.5MR |
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