SUM110P04-05-E3

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SUM110P04-05-E3 - Vishay(Siliconix)
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Краткое описание: P-Channel MOSFET, 40V, 5mR Rds(on), 375W, TO-263
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel power MOSFET featuring a 40V drain-source voltage and 5mΩ drain-source on-resistance. This surface-mount component offers a continuous drain current of 39A and a maximum power dissipation of 375W. Operating across a wide temperature range of -55°C to 175°C, it boasts fast switching characteristics with turn-on delay times of 25ns and fall times of 35ns. The TO-263 package ensures efficient thermal management for demanding power applications.
RoHS Compliant
Mount Surface Mount
Width 9.65mm
Height 4.83mm
Length 10.41mm
Series TrenchFET®
Weight 0.050717oz
Polarity P-CHANNEL
Fall Time 35ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 5mR
Nominal Vgs -3V
Package/Case TO-263
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 11.3nF
Power Dissipation 15W
Threshold Voltage -3V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 25ns
Radiation Hardening No
Turn-Off Delay Time 110ns
Reach SVHC Compliant No
Max Power Dissipation 375W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 39A
Drain to Source Voltage (Vdss) -40V
Drain-source On Resistance-Max 4.2mR

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