SUM110P06-07L-E3
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Краткое описание:
P-Channel MOSFET, 110A, -60V, 6.9mR, TO-263
Дополнительная информация
P-channel power MOSFET with 60V drain-source voltage and 110A continuous drain current. Features low 6.9mΩ drain-source on-resistance and 3.75W power dissipation. Surface mount TO-263 package with a 240ns fall time and 20ns turn-on delay. Operates from -55°C to 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Weight | 0.068654oz |
| Polarity | P-CHANNEL |
| Fall Time | 240ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.9mR |
| Nominal Vgs | -3V |
| Package/Case | TO-263 |
| Package Quantity | 1 |
| Input Capacitance | 11.4nF |
| Power Dissipation | 3.75W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 200ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.75W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 6.9MR |
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