SUM52N20-39P-E3
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Краткое описание:
200V 52A N-CH MOSFET D2PAK, 38mR Rds(on)
Дополнительная информация
N-channel MOSFET with 200V drain-source voltage and 52A continuous drain current. Features low 38mΩ drain-source resistance and a 4.5V nominal gate-source voltage. This surface-mount component, housed in a TO-263-3 package, offers fast switching with a 9ns fall time and 18ns turn-on delay. Operating temperature range is -55°C to 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Packaging | Tape and Reel |
| Rds On Max | 38mR |
| Nominal Vgs | 4.5V |
| Termination | SMD/SMT |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.22nF |
| Threshold Voltage | 4.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 18ns |
| Dual Supply Voltage | 200V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 34ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.12W |
| Reverse Recovery Time | 133ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 38mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 52A |
| Drain to Source Voltage (Vdss) | 200V |
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