SUM60N02-3M9P-E3

Снят с производства
SUM60N02-3M9P-E3 - Vishay(Siliconix)
Краткое описание: N-CH MOSFET 20V 60A 3.9mR TO-263 Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Power MOSFET, 20V Vds, 60A continuous drain current, and 3.9mΩ maximum drain-source on-resistance. Features a TO-263 surface-mount package with a maximum power dissipation of 120W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay time of 15ns and fall time of 8ns. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 9.65mm
Height 4.83mm
Length 10.41mm
Series TrenchFET®
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3.9mR
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 800
Input Capacitance 5.95nF
Number of Channels 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 35ns
Max Power Dissipation 120W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.9mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 3.9mR

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