SUM60N10-17-E3

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SUM60N10-17-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 100V 60A 16.5mR TO-263
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET, 100V drain-source voltage, 60A continuous drain current, and 16.5mΩ maximum drain-source on-resistance. Features a TO-263 surface-mount package, 150W maximum power dissipation, and operates from -55°C to 175°C. Includes fast switching characteristics with typical turn-on delay of 15ns and fall time of 10ns. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 9.65mm
Height 4.83mm
Length 10.41mm
Series TrenchFET®
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 16.5mR
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 4.3nF
Power Dissipation 3.75W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 30ns
Max Power Dissipation 150W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 16.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 16.5mR

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