SUM65N20-30-E3
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Краткое описание:
N-CH MOSFET 200V 65A 30mR TO-263 SMD
Дополнительная информация
N-channel power MOSFET with 200V drain-source voltage and 65A continuous drain current. Features 30mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 4V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 3.75W. Packaged in a TO-263 surface-mount case, this RoHS compliant component offers fast switching speeds with turn-on delay of 24ns and fall time of 200ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 200ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 30mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.1nF |
| Power Dissipation | 3.75W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 24ns |
| Dual Supply Voltage | 200V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.75W |
| Reverse Recovery Time | 130ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 65A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 30mR |
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