SUM85N15-19-E3

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SUM85N15-19-E3 - Vishay(Siliconix)
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Краткое описание: N-Channel MOSFET, 150V, 85A, 19mR Rds On, TO-263
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET with 150V drain-source voltage and 85A continuous drain current. Features low 19mΩ drain-source on-resistance and 4.75nF input capacitance. Packaged in a TO-263-3 surface-mount case, this component offers fast switching with turn-on delay of 22ns and fall time of 170ns. Operates from -55°C to 175°C with 3.75W maximum power dissipation. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 9.65mm
Height 4.83mm
Length 10.41mm
Series TrenchFET®
Weight 0.050717oz
Current 85A
Voltage 150V
Polarity N-CHANNEL
Fall Time 170ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 19mR
Nominal Vgs 2V
Termination SMD/SMT
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 4.75nF
Threshold Voltage 4V
Number of Channels 1
Turn-On Delay Time 22ns
Dual Supply Voltage 150V
Radiation Hardening No
Turn-Off Delay Time 40ns
Reach SVHC Compliant Unknown
Max Power Dissipation 3.75W
Reverse Recovery Time 130ns
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 19mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 85A
Drain to Source Voltage (Vdss) 150V
Drain-source On Resistance-Max 19mR

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