SUM90N04-3M3P-E3

Производится
SUM90N04-3M3P-E3 - Vishay(Siliconix)
Краткое описание: N-Ch MOSFET, 40V, 90A, 3.3mR RdsOn, TO-263
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

Single N-Channel Power MOSFET featuring a 40V drain-source voltage and a maximum drain current of 90A. Surface mountable in a TO-263-3 package, this component offers a low drain-source on-resistance of 3.3mR. Key switching characteristics include a 7ns fall time and 11ns turn-on delay. Operating across a wide temperature range from -55°C to 150°C, it supports a maximum power dissipation of 125W.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Weight 0.050717oz
Polarity N-CHANNEL
Fall Time 7ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3.3mR
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 800
Input Capacitance 5.286nF
Number of Channels 1
Turn-On Delay Time 11ns
Radiation Hardening No
Turn-Off Delay Time 45ns
Max Power Dissipation 125W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.7mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 90A
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 3.3mR