SUM90N10-8M2P-E3
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Краткое описание:
100V 90A N-Channel MOSFET, 8.2mR Rds On, TO-263
Дополнительная информация
N-channel power MOSFET with 100V drain-source voltage and 90A continuous drain current. Features 8.2mΩ maximum drain-source on-resistance and 300W maximum power dissipation. This surface-mount TO-263 packaged component offers a 2.5V threshold voltage and operates from -55°C to 175°C. Includes 23ns turn-on delay and 34ns turn-off delay times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.2mR |
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 6.29nF |
| Power Dissipation | 3.75W |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 23ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 34ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 8.2mR |
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