SUM90P10-19L-E3

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SUM90P10-19L-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET 100V 17.2A 19mR TO-263
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel Power MOSFET, surface mount, TO-263 package. Features -100V drain-source voltage, 17.2A continuous drain current, and 19mΩ drain-source on-resistance. Operates from -50°C to 175°C with a maximum power dissipation of 375W. Includes 11.1nF input capacitance and 870ns fall time. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 9.65mm
Height 4.83mm
Length 10.41mm
Series TrenchFET®
Weight 0.050717oz
Polarity P-CHANNEL
Fall Time 870ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 19mR
Nominal Vgs -3V
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 11.1nF
Power Dissipation 13.6W
Threshold Voltage -3V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 145ns
Reach SVHC Compliant No
Max Power Dissipation 375W
Max Operating Temperature 175°C
Min Operating Temperature -50°C
Drain to Source Resistance 19mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 17.2A
Drain to Source Voltage (Vdss) -100V
Drain-source On Resistance-Max 19mR

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