SUP33N20-60P-E3

Снят с производства
SUP33N20-60P-E3 - Vishay(Siliconix)
Увеличить
Краткое описание: N-CHANNEL MOSFET 200V 33A 60mR TO-220-3 Through Hole
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

The SUP33N20-60P-E3 is a TO-220-3 packaged N-channel MOSFET from Vishay with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current rating of 33A and a drain to source breakdown voltage of 200V. The device also features a drain to source resistance of 60mR and a threshold voltage of 4.5V. The MOSFET is RoHS compliant and is available in a package quantity of 50 in a rail/Tube packaging.
RoHS Compliant
Mount Through Hole
Polarity N-CHANNEL
Fall Time 9ns
Packaging Rail/Tube
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Power Dissipation 3.12W
Threshold Voltage 4.5V
Turn-On Delay Time 16ns
Radiation Hardening No
Turn-Off Delay Time 26ns
Reach SVHC Compliant No
Max Power Dissipation 3.12W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 60mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 33A
Drain to Source Voltage (Vdss) 200V
Drain to Source Breakdown Voltage 200V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.