SUP40N25-60-E3

Производится
SUP40N25-60-E3 - Vishay(Siliconix)
Увеличить
Краткое описание: MOSFET N-CH 250V 40A 60mR TO-220AB
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 250V drain-to-source breakdown voltage and 40A continuous drain current. Offers low 60mΩ drain-to-source resistance and 300W power dissipation. Designed for through-hole mounting in a TO-220-3 package, with operating temperatures from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 22ns and fall time of 145ns.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 9.01mm
Length 10.41mm
Series TrenchFET®
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 145ns
Packaging Rail/Tube
Rds On Max 60mR
Package/Case TO-220-3
Polarization N
RoHS Compliant Yes
Package Quantity 500
Input Capacitance 5nF
Power Dissipation 300W
Number of Channels 1
Turn-On Delay Time 22ns
Radiation Hardening No
Turn-Off Delay Time 40ns
Max Power Dissipation 3.75W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 60mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 40A
Drain to Source Voltage (Vdss) 250V
Drain to Source Breakdown Voltage 250V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.