SUP53P06-20-E3
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Краткое описание:
P-CH MOSFET 60V 53A 19.5mR TO-220AB
Дополнительная информация
P-channel MOSFET with a -60V drain-source voltage and 53A continuous drain current. Features low 19.5mΩ drain-source on-resistance and 20V gate-source voltage. Packaged in a TO-220AB through-hole mount, this device offers 104.2W power dissipation and operates from -55°C to 150°C. Includes fast switching times with 10ns turn-on and 70ns turn-off delays.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Weight | 0.211644oz |
| Polarity | P-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 19.5mR |
| Package/Case | TO-220AB |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 3.5nF |
| Power Dissipation | 104.2W |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 19.5MR |
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