SUP60N02-4M5P-E3

Снят с производства
SUP60N02-4M5P-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 20V 60A 4.5mR TO-220AB
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET with 20V drain-source voltage and 60A continuous drain current. Features low 4.5mΩ drain-to-source resistance and 120W maximum power dissipation. Operates from -55°C to 175°C, with fast switching times including 8ns fall time, 15ns turn-on delay, and 35ns turn-off delay. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers 5.95nF input capacitance.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 9.01mm
Length 10.41mm
Series TrenchFET®
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 8ns
Packaging Tape and Reel
Rds On Max 4.5mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 5.95nF
Number of Channels 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 35ns
Max Power Dissipation 120W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 4.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Drain to Source Voltage (Vdss) 20V

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