SUP60N06-12P-E3
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Краткое описание:
60V 60A N-CH MOSFET, 12mR Rds On, TO-220
Дополнительная информация
N-channel MOSFET with 60V drain-source voltage (Vdss) and 60A continuous drain current (ID). Features low 12mR drain-to-source resistance (Rds On Max) and 100W power dissipation. Packaged in a TO-220-3 through-hole mount with a maximum operating temperature of 150°C. Offers fast switching characteristics with turn-on delay time of 11ns and fall time of 8ns. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Rail/Tube |
| Rds On Max | 12mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.97nF |
| Power Dissipation | 100W |
| Number of Channels | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 60V |
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