SUP60N06-12P-GE3
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Краткое описание:
60V 60A N-CH MOSFET 12mR TO-220AB
Дополнительная информация
N-channel MOSFET with 60V drain-source voltage and 60A continuous drain current. Features low 12mR drain-source on-resistance and 100W maximum power dissipation. Packaged in a TO-220AB through-hole mount, this component offers fast switching with typical turn-on delay of 11ns and fall time of 8ns. Operating temperature range from -55°C to 150°C, it is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 12mR |
| Package/Case | TO-220AB |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.97nF |
| Power Dissipation | 3.25W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 12mR |
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