SUP60N10-16L-E3

Снят с производства
SUP60N10-16L-E3 - Vishay(Siliconix)
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Краткое описание: 100V 60A N-CH MOSFET 16mR TO-220AB
Производитель Vishay(Siliconix)
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET with 100V drain-source voltage and 60A continuous drain current. Features low 16mR drain-source on-resistance and 150W maximum power dissipation. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers fast switching with turn-on delay of 12ns and fall time of 130ns. Operates across a wide temperature range from -55°C to 175°C.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 9.01mm
Length 10.41mm
Series TrenchFET®
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 130ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 16mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 3.82nF
Number of Channels 1
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 55ns
Max Power Dissipation 150W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 16mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 16mR

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