SUP65P06-20-E3
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Краткое описание:
P-Channel MOSFET, 65A, 20mR, -60V, TO-220
Дополнительная информация
P-channel power transistor in a TO-220-3 package, featuring a continuous drain current of 65A and a low drain-source on-resistance of 20mR. This through-hole component operates with a drain-to-source voltage of -60V and a nominal gate-source voltage of -3V. It offers fast switching characteristics with turn-on delay time of 15ns and fall time of 30ns, supporting a maximum power dissipation of 250W. Designed for high-temperature operation up to 175°C, this RoHS compliant transistor is suitable for demanding applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Series | SUP |
| Weight | 0.211644oz |
| Polarity | P-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Nominal Vgs | -3V |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 65A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 20mR |
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