SUP85N02-03
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Краткое описание:
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Дополнительная информация
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
| RoHS | Not Compliant |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Series | SUP |
| Weight | 0.079014oz |
| Polarity | N-CHANNEL |
| Fall Time | 320ns |
| Packaging | Rail/Tube |
| Package/Case | TO-220-3 |
| RoHS Compliant | No |
| Package Quantity | 50 |
| Power Dissipation | 250W |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| Turn-Off Delay Time | 450ns |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 85A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | 20V |
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