SUP85N10-10-E3
Производится
Увеличить
Краткое описание:
N-CH MOSFET 100V 85A 10.5mR TO-220AB
Дополнительная информация
N-channel MOSFET transistor featuring 100V drain-source breakdown voltage and 85A continuous drain current. This through-hole component offers a low 10.5mΩ drain-source on-resistance and operates within a -55°C to 175°C temperature range. Packaged in TO-220-3, it boasts a maximum power dissipation of 250W and includes fast switching characteristics with a 12ns turn-on delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Series | TrenchFET® |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 130ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 10.5mR |
| Nominal Vgs | 3V |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 6.55nF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 85A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 10.5mR |
| Drain to Source Breakdown Voltage | 100V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
