SUP85N10-10P-GE3

Снят с производства
SUP85N10-10P-GE3 - Vishay(Siliconix)
Увеличить
Краткое описание: N-CHANNEL TrenchFET MOSFET 100V 85A 10mR 227W TO-220-3
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The SUP85N10-10P-GE3 is a high-power N-channel MOSFET from Vishay, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. With a continuous drain current of 85A and a maximum power dissipation of 227W, this device is suitable for high-current applications. The TO-220-3 package provides a flange mount with a through-hole mount option, making it suitable for a variety of applications. The MOSFET is RoHS compliant and has a nominal Vgs of 3V.
RoHS Compliant
Mount Through Hole
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 8ns
Packaging Rail/Tube
Rds On Max 10mR
Nominal Vgs 3V
Package/Case TO-220-3
RoHS Compliant Yes
Input Capacitance 4.66nF
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 25ns
Max Power Dissipation 227W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 10.5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 85A
Drain to Source Voltage (Vdss) 100V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.