SUP85N15-21-E3

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SUP85N15-21-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 150V 85A 21mR TO-220AB
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET with 150V drain-source voltage and 85A continuous drain current. Features low 21mΩ drain-source resistance and 300W power dissipation. Packaged in a TO-220AB through-hole mount with a 175°C maximum operating temperature. Includes fast switching times with turn-on delay at 22ns and fall time at 170ns.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 9.01mm
Length 10.41mm
Series TrenchFET®
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 170ns
Packaging Rail/Tube
Rds On Max 21mR
Nominal Vgs 2V
Package/Case TO-220AB
RoHS Compliant Yes
DC Rated Voltage 150V
Package Quantity 500
Input Capacitance 4.75nF
Power Dissipation 300W
Number of Channels 1
Turn-On Delay Time 22ns
Radiation Hardening No
Turn-Off Delay Time 40ns
Reach SVHC Compliant Unknown
Max Power Dissipation 2.4W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 21mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 85A
Drain to Source Voltage (Vdss) 150V

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