SUP90N04-3M3P-GE3

Снят с производства
SUP90N04-3M3P-GE3 - Vishay(Siliconix)
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Краткое описание: 90A 40V 3.3mR N-CH Power MOSFET TO-220-3
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET with 40V drain-source voltage and 90A continuous drain current. Features low 3.3mΩ drain-to-source resistance and 125W maximum power dissipation. Operates across a -55°C to 150°C temperature range, with a 1V threshold voltage and 20V gate-source voltage rating. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers fast switching with turn-on delay of 11ns and fall time of 7ns.
RoHS Compliant
Mount Through Hole
Series TrenchFET®
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 7ns
Packaging Bulk
Rds On Max 3.3mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 5.286nF
Threshold Voltage 1V
Number of Channels 1
Turn-On Delay Time 11ns
Radiation Hardening No
Turn-Off Delay Time 45ns
Reach SVHC Compliant No
Max Power Dissipation 125W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.3mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 90A
Drain to Source Voltage (Vdss) 40V

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