SUP90N06-6M0P-E3

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SUP90N06-6M0P-E3 - Vishay(Siliconix)
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Краткое описание: 60V 90A N-Channel Power MOSFET TO-220AB 6mR
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET with 60V drain-source voltage and 90A continuous drain current. Features low 6mΩ drain-to-source resistance and 4.7nF input capacitance. Designed for through-hole mounting in a TO-220-3 package, operating from -55°C to 175°C. RoHS compliant with fast switching times, including 16ns turn-on and 8ns fall times.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 9.01mm
Length 10.41mm
Series TrenchFET®
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 8ns
Packaging Tape and Reel
Rds On Max 6mR
Termination Through Hole
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 4.7nF
Number of Channels 1
Turn-On Delay Time 16ns
Dual Supply Voltage 60V
Radiation Hardening No
Turn-Off Delay Time 25ns
Max Power Dissipation 3.75W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 5mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 90A
Drain to Source Voltage (Vdss) 60V

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