SUP90N08-4M8P-E3

Снят с производства
SUP90N08-4M8P-E3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 75V 90A 4.8mR TO-220AB
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 75V drain-source breakdown voltage and 90A continuous drain current. Offers ultra-low 4.8mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, with a maximum operating temperature of 175°C. Includes fast switching characteristics with 23ns turn-on and 34ns turn-off delay times.
RoHS Compliant
Mount Through Hole
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 4.8mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 500
Input Capacitance 6.46nF
Power Dissipation 3.75W
Turn-On Delay Time 23ns
Radiation Hardening No
Turn-Off Delay Time 34ns
Max Power Dissipation 3.75W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 4.8mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 90A
Drain to Source Voltage (Vdss) 75V
Drain-source On Resistance-Max 4.8mR
Drain to Source Breakdown Voltage 75V

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