SUP90P06-09L-E3

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SUP90P06-09L-E3 - Vishay(Siliconix)
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Краткое описание: P-CH MOSFET, 60V, 90A, 9.3mR, TO-220AB
Производитель Vishay(Siliconix)
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel Power MOSFET featuring a -60V drain-source breakdown voltage and 90A continuous drain current. This through-hole component offers a low 9.3mΩ drain-source on-resistance and operates within a -55°C to 175°C temperature range. Packaged in a TO-220AB case, it boasts a 250W power dissipation and 9.2nF input capacitance, with fast switching times including a 20ns turn-on delay.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 9.01mm
Length 10.41mm
Series TrenchFET®
Weight 0.211644oz
Polarity P-CHANNEL
Fall Time 300ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 9.3mR
Package/Case TO-220AB
Polarization P
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 9.2nF
Power Dissipation 250W
Threshold Voltage -1V
Number of Channels 1
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 140ns
Reach SVHC Compliant No
Max Power Dissipation 2.4W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 9.3mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 90A
Drain to Source Voltage (Vdss) -60V
Drain-source On Resistance-Max 9.3mR
Drain to Source Breakdown Voltage -60V

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