Si1467DH-T1-E3
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Краткое описание:
P-CH MOSFET 20V 2.7A 90mΩ SOT-363
Дополнительная информация
P-channel MOSFET, 20V Drain-Source Voltage, 2.7A Continuous Drain Current, and 90mΩ maximum Drain-Source On-Resistance at 4.5V Gate-Source Voltage. Features 2.78W maximum power dissipation and a low 1.5W power dissipation rating. This surface mount component, packaged in SOT-363-6, offers fast switching with turn-on delay of 16ns and fall time of 43ns. Operating temperature range from -55°C to 150°C, it is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | TrenchFET® |
| Weight | 0.000265oz |
| Polarity | P-CHANNEL |
| Fall Time | 43ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 90mR |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 561pF |
| Power Dissipation | 1.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Max Power Dissipation | 2.78W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 90mR |
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