Si1967DH

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Si1967DH - Vishay
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Краткое описание: P-CH MOSFET 20V 1.3A SC-70 6-Pin Dual
Производитель Vishay
Статус производства Производится (ACTIVE)

Дополнительная информация

P-channel enhancement mode power MOSFET, dual configuration, featuring a 20V drain-source voltage and 1.3A continuous drain current. This surface-mount transistor is housed in a compact 6-pin SC-70 (MO-203AB) plastic package with gull-wing leads, measuring 2mm x 1.25mm x 1mm. Key electrical characteristics include a maximum gate-source voltage of ±8V and a low on-resistance of 490mOhm at 4.5V Vgs. Operating temperature range spans from -55°C to 150°C.
PCB 6
ECCN EAR99
PPAP No
Jedec MO-203AB
EU RoHS No
Category Power MOSFET
HTS Code 8541210095
Mounting Surface Mount
Cage Code 18612
Pin Count 6
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type P
Package/Case SC-70
AEC Qualified No
Configuration Dual
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.25
Package Description Small Outline Transistor
Package Family Name SC
Package Height (mm) 1(Max)
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 740mW
Min Operating Temperature -55°C
Typical Gate Charge @ Vgs 2.6@8V|[email protected]nC
Maximum Gate Source Voltage ±8V
Number of Elements per Chip 2
Maximum Drain Source Voltage 20V
Maximum Drain Source Resistance [email protected]mOhm
Typical Input Capacitance @ Vds 110@10VpF
Maximum Continuous Drain Current 1.3A

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