Si2343CDS-T1-GE3
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Краткое описание:
P-CH MOSFET 30V 4.2A SOT-23 TrenchFET Single
Дополнительная информация
P-channel Power MOSFET, single element, enhancement mode, TrenchFET technology. Features 30V maximum drain-source voltage and 4.2A maximum continuous drain current. Offers 45mOhm maximum drain-source resistance at 10V. Packaged in a 3-pin SOT-23 (TO-236AB) lead-frame SMT with gull-wing leads, suitable for surface mounting. Operates from -55°C to 150°C.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-236AB |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | SOT-23 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.4(Max) |
| Process Technology | TrenchFET |
| Package Description | Small Outline Transistor |
| Package Family Name | SOT |
| Package Height (mm) | 1.02(Max) |
| Package Length (mm) | 3.04(Max) |
| Package Orientation | Yes |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.12(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1250mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 13.6nC |
| Typical Gate Charge @ Vgs | 13.6@10V|[email protected]nC |
| Typical Output Capacitance | 115pF |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 45@10VmOhm |
| Typical Input Capacitance @ Vds | 590@15VpF |
| Maximum Continuous Drain Current | 4.2A |
| Package Orientation Marking Type | Beveled Edge |
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