Si3483CDV-T1-E3
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Краткое описание:
P-Channel MOSFET, -30V, 34mR Rds(on), 6.1A, TSOP
Дополнительная информация
Single P-Channel MOSFET, 30V drain-source voltage, 6.1A continuous drain current, and 34mΩ drain-source resistance. Features a 1.65mm width, 3.05mm length, and 1mm height in a TSOP package for surface mounting. Operates from -55°C to 150°C with a maximum power dissipation of 2W. Includes 1nF input capacitance and 10ns turn-on time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.65mm |
| Height | 1mm |
| Length | 3.05mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 34mR |
| Nominal Vgs | -3V |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1nF |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 34mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 6.1A |
| Drain to Source Voltage (Vdss) | -30V |
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