Si3585CDV-T1-GE3
Производится
Увеличить
Краткое описание:
N/P-Channel MOSFET, 20V, 2.1A, 195mR, TSOP
Дополнительная информация
N and P-Channel MOSFET, 20V Drain-Source Voltage, 2.1A Continuous Drain Current, 58mR Max Drain-Source On Resistance. Features 1.5V Threshold Voltage, 3ns Turn-On Delay, 7ns Fall Time, and 13ns Turn-Off Delay. Surface mount TSOP package with 150°C max operating temperature. RoHS compliant with 1.1W power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.1mm |
| Series | TrenchFET® |
| Weight | 0.000705oz |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 58mR |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 150pF |
| Power Dissipation | 1.1W |
| Threshold Voltage | 1.5V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 3ns |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 195mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 195mR |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
