Si5419DU-T1-GE3
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Краткое описание:
P-Channel 30V 20mR SMT Power MOSFET
Дополнительная информация
P-channel MOSFET featuring 30V drain-source voltage and 20mΩ drain-source on-resistance. This surface-mount power MOSFET offers a continuous drain current of 9.9A and a maximum power dissipation of 31W. Designed for efficient switching, it exhibits a 10ns turn-on delay and 12ns fall time. The component operates within a temperature range of -55°C to 150°C and is packaged in a compact 3mm x 1.9mm x 0.75mm PowerPAK-ChipFET-8 package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.9mm |
| Height | 0.75mm |
| Length | 3mm |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.4nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 31W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 20MR |
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