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Краткое описание:
P-CH MOSFET 20V 42.7A 1.9mOhm PowerPAK SO 8-Pin
Дополнительная информация
P-channel Power MOSFET, featuring TrenchFET process technology, offers a 20V maximum drain-source voltage and 42.7A maximum continuous drain current. This surface-mount component utilizes an 8-pin PowerPAK SO package with no leads, measuring 4.9mm x 5.89mm x 1.07mm. It boasts a low 1.9mOhm maximum drain-source resistance at 10V and a typical gate charge of 265nC at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 6250mW.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | PowerPAK SO |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 5.89 |
| Process Technology | TrenchFET |
| Package Height (mm) | 1.07(Max) |
| Package Length (mm) | 4.9 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.04 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 6250mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 265nC |
| Typical Gate Charge @ Vgs | 265@10V|[email protected]nC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | 1.9@10VmOhm |
| Typical Input Capacitance @ Vds | 14300@10VpF |
| Maximum Continuous Drain Current | 42.7A |
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