Si9945BDY-T1-GE3
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Краткое описание:
N-CH Power MOSFET 60V 5.3A 8-Pin SOIC N TrenchFET
Дополнительная информация
N-channel Power MOSFET, TrenchFET technology, 60V drain-source voltage, 5.3A continuous drain current, and 58mOhm maximum drain-source resistance at 10V. Features dual dual drain configuration with 2 elements per chip, 3V gate threshold voltage, and ±20V gate-source voltage. Housed in an 8-pin SOIC N (SOP) lead-frame SMT package with gull-wing leads, measuring 5mm x 4mm x 1.55mm. Operates from -55°C to 150°C with a maximum power dissipation of 2000mW.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | MS-012 |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SOIC N |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 4(Max) |
| Process Technology | TrenchFET |
| Package Description | Small Outline IC Narrow Body |
| Package Family Name | SOP |
| Package Height (mm) | 1.55(Max) |
| Package Length (mm) | 5(Max) |
| Package Orientation | Yes |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.75(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 13nC |
| Typical Gate Charge @ Vgs | 13@10V|[email protected]nC |
| Typical Output Capacitance | 75pF |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 58@10VmOhm |
| Typical Input Capacitance @ Vds | 665@15VpF |
| Maximum Continuous Drain Current | 5.3A |
| Package Orientation Marking Type | Beveled Edge |
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