SiA431DJ-T1-GE3
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Краткое описание:
P-CH Power MOSFET 20V 12A 6-Pin PowerPAK SC-70
Дополнительная информация
P-channel Power MOSFET, 20V drain-source voltage, 12A continuous drain current. Features TrenchFET process technology, 25mΩ maximum drain-source resistance at 4.5V. Housed in a 6-pin PowerPAK SC-70 surface-mount package with 2.05mm x 2.05mm dimensions. Operates from -55°C to 150°C, with a maximum power dissipation of 3500mW.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | PowerPAK SC-70 |
| AEC Qualified | No |
| Configuration | Single Quad Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Package Width (mm) | 2.05 |
| Process Technology | TrenchFET |
| Package Family Name | SOT |
| Package Height (mm) | 0.75 |
| Package Length (mm) | 2.05 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.75 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 3500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 40@8V|[email protected]nC |
| Maximum Gate Source Voltage | ±8V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 1700@10VpF |
| Maximum Continuous Drain Current | 12A |
