SiA433EDJ-T1-GE3
Производится
Увеличить
Краткое описание:
P-CH MOSFET 20V 12A PowerPAK SC-70 6-Pin SMT
Дополнительная информация
P-channel Power MOSFET featuring TrenchFET technology. 20V drain-source voltage and 12A continuous drain current. 6-pin PowerPAK SC-70 surface-mount package with 2.05mm x 2.05mm dimensions. Low 18mOhm drain-source resistance at 4.5V gate-source voltage.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package/Case | PowerPAK SC-70 |
| AEC Qualified | No |
| Configuration | Single Quad Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Package Width (mm) | 2.05 |
| Process Technology | TrenchFET |
| Package Family Name | SOT |
| Package Height (mm) | 0.75 |
| Package Length (mm) | 2.05 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.75 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 3500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 50@8V|[email protected]nC |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Threshold Voltage | 1.2V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Maximum Continuous Drain Current | 12A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
