SiA778DJ-T1-GE3
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Краткое описание:
Dual N-CH MOSFET 12V/20V 4.5A/1.5A 6-Pin PowerPAK SC-70
Дополнительная информация
N-channel Power MOSFET featuring a 6-pin PowerPAK SC-70 surface-mount package. Dual dual drain configuration with 2 elements per chip. Maximum drain-source voltages are 12V for Channel 1 and 20V for Channel 2. Continuous drain currents reach 4.5A for Channel 1 and 1.5A for Channel 2. Low drain-source on-resistance of 29mOhm at 4.5V for Channel 1 and 225mOhm at 4.5V for Channel 2. Operating temperature range from -55°C to 150°C.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | PowerPAK SC-70 |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Package Width (mm) | 2.05 |
| Package Family Name | SOT |
| Package Height (mm) | 0.75 |
| Package Length (mm) | 2.05 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.85(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1900mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 9.7@8V|[email protected]@Channel 1|1.3@5V|[email protected]@Channel 2nC |
| Maximum Gate Source Voltage | ±8@Channel 1|±6@Channel 2V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 12@Channel 1|20@Channel 2V |
| Maximum Drain Source Resistance | [email protected]@Channel 1|[email protected]@Channel 2mOhm |
| Typical Input Capacitance @ Vds | 500@6V@Channel 1pF |
| Maximum Continuous Drain Current | 4.5@Channel 1|1.5@Channel 2A |
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