SiHB12N60E-GE3
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Краткое описание:
600V 12A N-Ch MOSFET, 380mR RdsOn, D2PAK
Дополнительная информация
N-Channel Power MOSFET with 600V Drain-Source Voltage (Vdss) and 12A Continuous Drain Current (ID). Features 380mOhm maximum Drain-Source On-Resistance (Rds On) at 10V Gate-Source Voltage (Vgs). Operates with a threshold voltage of 2V and a maximum gate-source voltage of 20V. Offers fast switching characteristics with a 14ns turn-on delay and 35ns turn-off delay, and a 38ns fall time. This surface-mount component is housed in a D2PAK package, rated for 147W maximum power dissipation, and operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 38ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 380mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 937pF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 147W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 380MR |
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