SiHD3N50D-GE3
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Краткое описание:
500V 3A N-CH MOSFET, 3.2R Rds On, DPAK
Дополнительная информация
N-channel MOSFET transistor designed for surface mount applications, featuring a 500V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 3A. This component offers a low drain-to-source on-resistance (Rds On) of 3.2 Ohms and a threshold voltage (Vgs(th)) of 3V. Packaged in a TO-252AA (DPAK) surface mount package, it boasts a maximum power dissipation of 104W and operates within a temperature range of -55°C to 150°C. Switching characteristics include a turn-on delay time of 12ns, turn-off delay time of 11ns, and a fall time of 13ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.38mm |
| Length | 6.73mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.2R |
| Package/Case | TO-252AA |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 175pF |
| Power Dissipation | 104W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 500V |
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