SiHD5N50D-GE3
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Краткое описание:
N-Ch MOSFET 500V 5.3A 1.5R TO-252 SM
Дополнительная информация
N-channel MOSFET, 500V drain-source voltage, 5.3A continuous drain current, and 1.5 ohm Rds On at 10V gate-source voltage. Features a 3V threshold voltage, 12ns turn-on delay, 11ns fall time, and 14ns turn-off delay. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 104W. Surface mountable in a TO-252 package, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.38mm |
| Length | 6.73mm |
| Series | E |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Packaging | Tape and Reel |
| Rds On Max | 1.5R |
| Package/Case | TO-252 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 325pF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | 500V |
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