SiHF840ASTR-E3
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Краткое описание:
N-CH 500V 8A Power MOSFET, D2PAK, TO-263, SMT
Дополнительная информация
N-channel Power MOSFET, 500V Drain-Source Voltage, 8A Continuous Drain Current. Features 850mOhm maximum Drain-Source On-Resistance at 10V Gate-Source Voltage and 38nC typical Gate Charge. Surface mount D2PAK package (TO-263AB) with gull-wing leads, measuring 10.41mm x 9.65mm x 4.83mm. Operates from -55°C to 150°C with 3100mW maximum power dissipation.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-263AB |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | D2PAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 9.65(Max) |
| Package Description | Double Deca Watt Package |
| Package Family Name | TO-263 |
| Package Height (mm) | 4.83(Max) |
| Package Length (mm) | 10.41(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 4.83(Max) + 0.25 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 3100mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 38(Max)nC |
| Typical Gate Charge @ Vgs | 38(Max)@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Drain Source Resistance | 850@10VmOhm |
| Typical Input Capacitance @ Vds | 1018@25VpF |
| Maximum Continuous Drain Current | 8A |
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