SiHFI630G
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Краткое описание:
N-CH Power MOSFET 200V 5.9A TO-220
Дополнительная информация
N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 200V and continuous drain current of 5.9A. Features a low on-resistance of 400mΩ at 10V, typical gate charge of 43nC, and input capacitance of 800pF at 25V. Housed in a TO-220 Full-Pak through-hole package with 3 pins and a tab, offering a maximum power dissipation of 35W and an operating temperature range of -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 18612 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 Full-Pak |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.83(Max) |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-220 |
| Package Height (mm) | 16.12(Max) |
| Package Length (mm) | 10.63(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 19.62(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 35000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 43(Max)nC |
| Typical Gate Charge @ Vgs | 43(Max)@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Drain Source Resistance | 400@10VmOhm |
| Typical Input Capacitance @ Vds | 800@25VpF |
| Maximum Continuous Drain Current | 5.9A |
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